ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition
ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition
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DOI：
10.1088/0268-1242/27/7/074005
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发表时间：
2012-07
影响因子：
1.9
通讯作者：
Miin-Jang Chen;J. Yang;M. Shiojiri
中科院分区：
文献类型：
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作者：
Miin-Jang Chen;J. Yang;M. Shiojiri
We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.
