Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.
Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.
复制标题
DOI：
10.1038/srep26287
复制
发表时间：
2016-05-20
影响因子：
4.6
通讯作者：
Cho HK
中科院分区：
文献类型：
--
作者：
Kim YK;Ahn CH;Yun MG;Cho SW;Kang WJ;Cho HK
本文提出了一种简单可控的“湿脉冲退火”技术，用于通过可扩展的真空沉积在低温（150°C）下制造柔性非晶 InGaZnO 薄膜晶体管（a-IGZO TFT）。该方法需要快速注入水蒸气0.1秒并在干燥环境中吹扫处理一个周期；水蒸气的供给量仅通过脉冲重复次数来控制。电传输特性显示，在最高工艺温度 150℃ 下制备的 a-IGZO TFT 具有卓越的性能（场效应迁移率为 13.3cm2 V−1 s−1；Ion/Ioff 比 ≈ 108；I-V 磁滞减小），与在干燥环境中 350℃ 退火的 a-IGZO TFT 相当。根据角分辨X射线光电子能谱分析，良好的性能归因于有效抑制了氢氧化物和氧相关缺陷的形成。最后，采用湿式脉冲退火工艺，在塑料基板上制备了具有良好电气性能和弯曲性能的超薄柔性a-IGZO TFT。
In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V−1 s−1; Ion/Ioff ratio ≈ 108; reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.