A closed-form model of the drain-voltage dependence of the OFF-state channel electric field in a HEMT with a field plate
A closed-form model of the drain-voltage dependence of the OFF-state channel electric field in a HEMT with a field plate
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DOI：
10.1109/ted.2006.882273
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发表时间：
2006-10-01
影响因子：
3.1
通讯作者：
Soudabi, N.
中科院分区：
文献类型：
--
作者：
Karmalkar, Shreepad;Soudabi, N.
利用漏极电压和物理参数，建立了高电子迁移率晶体管（HEMT）在关断状态下场极板下的通道场分布模型。根据漏极电压和器件结构的不同，这种分布最多可以有三个峰值——在场极板的两端和漏极各有一个。结果表明，完整的分布可以近似为三角形分布的叠加，这与p-n结耗尽层中的分布类似；因此，峰值随着漏极电压的平方根而增加。该模型适合二维仿真结果，并可以估计最小漏极分离、电场减小、击穿电压提高以及带场板的HEMT发生寄生现象的临界场。
The channel-field distribution under the field plate in a high-electron mobility transistor (HEMT) in the OFF-state is modeled in terms of drain-voltage and physical parameters. Depending upon the drain-voltage and device structure, this distribution can have up to three peaks-one each at the two ends of the field plate and at the drain. It is shown that the complete distribution can be approximated as superposition of triangular distributions, which are analogous to that in the depletion layer of a p-n junction; consequently, the peaks increase as square root of the drain-voltage. The model fits into two-dimensional simulation results and allows estimation of the minimum drain-gate separation, the electric-field reduction, the breakdown-voltage improvement, and critical field for the onset of a parasitic phenomenon in a HEMT with a field plate.