Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy
Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy
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DOI：
10.1002/adma.202103360
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发表时间：
2021-09-03
影响因子：
29.4
通讯作者：
Wee, Andrew T. S.
中科院分区：
文献类型：
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作者：
Chua, Rebekah;Zhou, Jun;Wee, Andrew T. S.
在2D系统中实现长程磁有序可能会彻底改变下一代信息技术。在这里，成功制造的晶体Cr 3 Te 4单层室温（RT）铁磁性的报告。使用分子束外延，单层厚度的2D Cr 3 Te 4薄膜的生长被证明在低衬底温度（约100摄氏度），与硅互补金属氧化物半导体技术兼容。X射线磁性圆二色性测量揭示了居里温度（Tc）为v344 K的Cr 3 Te 4单层与面外的磁易轴，降低到v240 K的较厚的膜（约7 nm）与面内的易轴。铁磁耦合和磁各向异性转变的增强归因于界面效应，特别是在单层Cr 3 Te 4/石墨界面的轨道重叠，由密度泛函理论计算支持。这项工作揭示了新的磁性和自旋电子器件的RT铁磁性的2D非层状材料的低温可扩展的增长。
The realization of long-range magnetic ordering in 2D systems can potentially revolutionize next-generation information technology. Here, the successful fabrication of crystalline Cr3Te4 monolayers with room temperature (RT) ferromagnetism is reported. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (approximate to 100 degrees C), compatible with Si complementary metal oxide semiconductor technology. X-ray magnetic circular dichroism measurements reveal a Curie temperature (T-c) of v344 K for the Cr3Te4 monolayer with an out-of-plane magnetic easy axis, which decreases to v240 K for the thicker film (approximate to 7 nm) with an in-plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr3Te4/graphite interface, supported by density-functional theory calculations. This work sheds light on the low-temperature scalable growth of 2D nonlayered materials with RT ferromagnetism for new magnetic and spintronic devices.