Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process
Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process
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DOI：
10.1109/tns.2009.2034153
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发表时间：
2009-12-01
影响因子：
1.8
通讯作者：
Narasimham, Balaji
中科院分区：
文献类型：
--
作者：
Gouker, Pascale M.;Gadlage, Matthew J.;Narasimham, Balaji
采用实验和模拟方法研究了全耗尽SOI（FDSOI）技术中电离辐射对单粒子瞬态的影响。逻辑电路，即CMOS反相器链，用钴-60伽马辐射照射。当用激光探测技术在n沟道FET中诱导电荷时，激光诱导的瞬态随总剂量的增加而变宽。这是因为辐射导致电荷被捕获在掩埋氧化物中，并降低了p沟道FET驱动电流。当p沟道FET驱动电流减小时，将激光探测的FET的输出恢复到其原始状态所需的时间增加，即，翻转瞬态宽度增加。当向晶片施加正偏压而不暴露于辐射时，也观察到瞬态脉冲的加宽。这是因为正的晶片偏压再现了在总剂量辐照期间发生的FET阈值电压的偏移。结果也验证了重离子测试和混合模式模拟。
Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI) technology using experiments and simulations. Logic circuits, i.e. CMOS inverter chains, were irradiated with cobalt-60 gamma radiation. When charge is induced in the n-channel FET with laser-probing techniques, laser-induced transients widen with increased total dose. This is because radiation causes charge to be trapped in the buried oxide, and reduces the p-channel FET drive current. When the p-channel FET drive current is reduced, the time required to restore the output of the laser-probed FET back to its original condition is increased, i.e. the upset transient width is increased. A widening of the transient pulse is also observed when a positive bias is applied to the wafer without any exposure to radiation. This is because a positive wafer bias reproduces the shifts in FET threshold voltages that occur during total dose irradiation. Results were also verified with heavy ion testing and mixed mode simulations.