Surface modification of thick SiC gradient coatings on doped graphite under long pulse plasma irradiation

Surface modification of thick SiC gradient coatings on doped graphite under long pulse plasma irradiation
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DOI:
10.1016/j.jnucmat.2007.01.193
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发表时间:
2007-06
影响因子:
3.1
通讯作者:
Xie Chunyi;Jinglan Chen;Jiuyuan Li;Fang Qianfeng
Xie Chunyi;Jinglan Chen;Jiuyuan Li;Fang Qianfeng
中科院分区:
工程技术2区
文献类型:
--
作者:
Xie Chunyi;Jinglan Chen;Jiuyuan Li;Fang Qianfeng

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聚变实验装置中面向等离子体材料的选择直接影响到等离子体的性能,因此对该材料的选择至关重要。为满足HT-7装置大功率和稳态运行的要求,选择了一种具有SiC厚梯度涂层的多元掺杂石墨GBST 1308(1%B4C,2.5%Si,7.5%Ti)作为HT-7装置的主要限流材料。采用长脉冲等离子体辐照技术对掺杂石墨表面SiC涂层进行了表面改性,并对改性后涂层的表面形貌、结构和原子组成进行了研究。结果表明,等离子体辐照后,石墨瓦表面的SiC晶体结构被片层或薄膜所取代,并含有丰富的氧和其它元素。
Selection of candidate plasma facing materials (PFM) in experimental fusion device is very important due to its direct influence on the plasma performance. To meet the requirements of high power and steady state operation, one kind of multi-element doped graphite GBST1308 (1%B4C, 2.5%Si, 7.5%Ti) with thick SiC gradient coatings was chosen as the main limiter materials for the HT-7 device. Surface modification of the SiC coatings on doped graphite under long pulse plasma irradiation was carefully investigated by examining the surface morphology, structure, and atomic composition. The obtained results showed the crystal structure of SiC was replaced by lamellar matter or film with plentiful oxygen and some other elements existed in the surface of graphite tiles after the plasma irradiation.