Tantalum-oxide catalysed chemical vapour deposition of single- and multi-walled carbon nanotubes
Tantalum-oxide catalysed chemical vapour deposition of single- and multi-walled carbon nanotubes
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DOI：
10.1039/c3ra23304a
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发表时间：
2013-01-01
期刊：
影响因子：
3.9
通讯作者：
Hofmann, Stephan
中科院分区：
文献类型：
--
作者：
Bayer, Bernhard C.;Castellarin-Cudia, Carla;Hofmann, Stephan
钽氧化物薄膜被证明可以通过化学气相沉积来催化单壁和多壁碳纳米管的生长。低膜厚度、支撑材料的性质（使用SiO2的最佳结果）和大气压工艺气体压力对于成功的纳米管成核至关重要。强烈的材料相互作用，如硅化物的形成，抑制纳米管的生长。原位X射线光电子能谱表明，没有催化剂还原为钽金属或钽碳化物发生在我们的纳米管生长条件和催化活性相是钽氧化物相。这种无还原的氧化物催化剂在技术上是有利的。
Tantalum-oxide thin films are shown to catalyse single- and multi-walled carbon nanotube growth by chemical vapour deposition. A low film thickness, the nature of the support material (best results with SiO2) and an atmospheric process gas pressure are of key importance for successful nanotube nucleation. Strong material interactions, such as silicide formation, inhibit nanotube growth. In situ X-ray photoelectron spectroscopy indicates that no catalyst reduction to Ta-metal or Ta-carbide occurs during our nanotube growth conditions and that the catalytically active phase is the Ta-oxide phase. Such a reduction-free oxide catalyst can be technologically advantageous.