Roughness study of a positive tone high performance SCALPEL resist
Roughness study of a positive tone high performance SCALPEL resist
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正色调高性能 SCALPEL 抗蚀剂的粗糙度研究
DOI：
10.1116/1.1321289
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发表时间：
2000
影响因子：
1.4
通讯作者：
Mitsuru Sato
中科院分区：
文献类型：
--
作者：
L. Ocola;P. A. Orphanos;W.Y. Li;W. Waskiewicz;A. Novembre;Mitsuru Sato
本文从成像过程的角度讨论了在SCALPEL曝光系统上曝光的正化学放大抗蚀剂的线边缘粗糙度。利用从曝光到显影的离散模型，模拟了SCALPEL曝光在正化学放大抗蚀剂上的成像过程。关键参数已经确定，使图像形成模拟，而不需要详细的分子模型。然而，要获得其中的一些参数，需要分子模型。用扫描电子显微镜和原子力显微镜对表面和线边缘粗糙度进行了模拟，并与实验结果进行了比较。结果与化学放大抗蚀剂的“扩散-反应发展的渗透网络形成”模型一致。
In this article we discuss the line edge roughness of positive chemically amplified resists exposed on the SCALPEL exposure system in terms of the image formation process. The image formation process for a SCALPEL exposure on a positive chemically amplified resist has been simulated using discrete models from exposure through development. Key parameters have been identified that enable image formation simulations without the need of detailed molecular models. Molecular models are needed though to obtain several of these parameters. Surface and line edge roughness, as measured by scanning electron microscopy and atomic force microscopy, have been simulated and compared to experimental results. Results are consistent with a “percolation network formation for diffusion-reaction development” model for chemically amplified resists.