Effect of Topological Bumpy Surface Underlayer on Compositionally Modulated Atomic Layer Stacking in High Ku hcp Co80Pt20 Film with (00.2) Crystallographic Texture Orientation
Effect of Topological Bumpy Surface Underlayer on Compositionally Modulated Atomic Layer Stacking in High Ku hcp Co80Pt20 Film with (00.2) Crystallographic Texture Orientation
复制标题
拓扑凹凸表面底层对 (00.2) 晶体织构取向高 Ku hcp Co80Pt20 薄膜中成分调制原子层堆积的影响
DOI：
10.1109/tmag.2015.2458016
复制
发表时间：
2015
影响因子：
2.1
通讯作者：
and Shin Saito
中科院分区：
文献类型：
--
作者：
Kim Kong Tham;Shintaro Hinata;and Shin Saito
研究了具有（00.2）晶构取向的高单轴磁晶各向异性（Ku） hcp co80pt20薄膜中拓扑凹凸表面下层对组成调制原子层堆积的影响。本文主要讨论了以下几个方面。在制备不同形貌的衬底层时，在沉积co80pt20薄膜之前进行退火处理和引入金属氧化物缓冲层是获得表面粗糙度为~0.4 ~ 2 nm、晶粒尺寸为~6.7 ~ 12.5 nm的衬底层的有效方法。高角环形暗场探测器扫描透射电子显微镜观测证实，要实现成分调制原子层堆叠结构，需要表面粗糙度小于~1 nm，且/或晶粒尺寸大于~8 nm的下层。组成调制显示出与衬底法线方向和hcp晶粒的c轴方向相同的法线方向。为了达到~1.7 × 107erg/cm3，需要将表面粗糙度减小到~0.5 nm，晶粒尺寸增大到~12 nm。
The effect of topological bumpy surface underlayer on compositionally modulated atomic layer stacking in high uniaxial magnetocrystalline anisotropy (Ku) hcp Co80Pt20film with (00.2) crystallographic texture orientation was investigated. In this paper, the following has been discussed. Concerning preparation of underlayer with various morphologies, an annealing process prior to the deposition of Co80Pt20film, and introduction of a metal-oxide buffer layer are effective to obtain underlayers with surface roughness ranging from ~0.4 to 2 nm and grain size ranging from ~6.7 to 12.5 nm. To realize a compositionally modulated atomic layer stacking structure, which is confirmed by the high angle annular dark field detector scanning transmission electron microscopy observation, an underlayer with surface roughness less than ~1 nm and/or grain size larger than ~8 nm is required. The compositional modulation shows the same normal direction as substrate normal and the c-axis direction of the hcp grain. To reach Kuof ~1.7 × 107erg/cm3, surface roughness reduction to ~0.5 nm and grain size increase to ~12 nm are needed.