Electronic transport and device application of crystalline graphitic carbon nitride film
Electronic transport and device application of crystalline graphitic carbon nitride film
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DOI：
10.1016/j.matlet.2020.128600
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发表时间：
2020-12
影响因子：
3
通讯作者：
Kensuke Takashima;N. Urakami;Y. Hashimoto
中科院分区：
文献类型：
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作者：
Kensuke Takashima;N. Urakami;Y. Hashimoto
研究了晶态g-C3 N4薄膜的电子输运特性及其器件应用。以三聚氰胺为原料，采用热化学气相沉积法制备了沿着轴向有序的g-C3 N4薄膜。膜的化学键被确认为构成g-C3 N4的键态。此外，从X射线光电子能谱的C1 s和N1s信号强度估计化学计量的N/C比为1.17。检测到g-C3 N4薄膜的典型光致发光和拉曼光谱。观察到依赖于晶体取向的各向异性输运特性，导致高的面外电导率和低的面内电导率。研制了一种以Au为阳极、Ti/Au为阴极的肖特基势垒二极管。实现了二极管的整流行为，表明g-C3 N4的电子器件应用的可能性。
The electronic transport characteristics of crystalline g-C3N4film and its device application were investigated. Crystalline g-C3N4films ordered along thec-axis were formed via thermal chemical vapor deposition using melamine source. The chemical bonds of the film were confirmed to be the bond states that constitutes g-C3N4. In addition, the stoichiometric N/C ratio was estimated as 1.17 from the C1s and N1s signal intensities of X-ray photoelectron spectroscopy. A typical photoluminescence and Raman spectra of the g-C3N4film was detected. Anisotropic transport characteristics with a dependence on the crystal orientation were observed, resulting in a high out-of-plane conductivity and a low in-plane conductivity. A Schottky barrier diode with a Au anode and Ti/Au cathode was fabricated as a vertical electronic device. Rectifying behavior was achieved for the diode, suggesting possibilities of electronic device applications of g-C3N4.