Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory
Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory
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GeCu2Te3相变存储器中置位操作的偏置极性依赖性研究
DOI：
10.1049/el.2017.3902
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发表时间：
2018
影响因子：
1.1
通讯作者：
Y.H. Song
中科院分区：
文献类型：
--
作者：
J.S. An;K.J. Kim;C.M. Choi;S. Shindo;Y. Sutou;Y.H. Song
我们测量了热电效应，特别是珀耳帖效应，在相变存储器（PCM）的操作，其中相变材料和电极之间的接触电阻占主导地位的总电阻。使用GeCu2Te3（GCT）材料制造具有直径为500 nm的柱结构的PCM器件。在读取操作期间，置位状态（具有结晶PCM）显示PCM和电极之间的欧姆接触，而复位状态（具有非晶PCM）显示肖特基接触。非晶GCT和电极之间的肖特基接触由于热电效应之一的Peltier效应而显示出设置操作的偏置极性依赖性。随着相变材料器件尺寸的减小，对接触电阻及其相关效应的研究将变得更加重要。
We measured the impact of the thermoelectric effect, especially the Peltier effect, upon the operation of phase change memory (PCM) in which the contact resistance between the phase change material and the electrode dominates the total resistance. A PCM device having a pillar structure of diameter 500 nm was fabricated using GeCu2Te3(GCT) material. During read operation, the set state (with crystalline PCM) showed ohmic contact between the PCM and the electrode, whereas the reset state (with amorphous PCM) showed Schottky contact. The Schottky contact between the amorphous GCT and the electrode showed a bias polarity dependence of set operation owing to the Peltier effect, which is one of the thermoelectric effects. As PCM devices scale down to the nanometre scale, research on contact resistance and various related effects will become more important.