Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes
Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes
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DOI：
10.1038/s41566-019-0477-4
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发表时间：
2019-10-01
期刊：
影响因子：
35
通讯作者：
David, John P. R.
中科院分区：
文献类型：
--
作者：
Yi, Xin;Xie, Shiyu;David, John P. R.
高速数据通信和光探测测距(LIDAR)系统等应用需要快速、灵敏的雪崩光电二极管(APD)。遗憾的是，在这些APD中用作增益材料的InP和InAlAs在高电场下具有相似的电子和空穴碰撞电离系数(分别为α和β)，从而产生相对较高的过剩噪声，限制了它们的灵敏度和增益带宽乘积。在这里，我们报道了与InP匹配的AlAs0.56Sb0.44晶格中极低的过剩噪声。在雪崩区为1,550 nm的情况下，推导出的β/α比低至0.005，接近理论最小值，明显小于硅的理论最小值，模拟结果表明，在25 GB S(-1)和1,550 nm的误码率下，可以实现灵敏度为-25.7dBm，误码率为1×10(-12)的垂直照明APD。这些发现可能会产生一种新的高性能接收器，用于网络和传感应用。
Fast, sensitive avalanche photodiodes (APDs) are required for applications such as high-speed data communications and light detection and ranging (LIDAR) systems. Unfortunately, the InP and InAlAs used as the gain material in these APDs have similar electron and hole impact ionization coefficients (alpha and beta, respectively) at high electric fields, giving rise to relatively high excess noise and limiting their sensitivity and gain bandwidth product'. Here,we report extremely low excess noise in an AlAs0.56Sb0.44 lattice matched to InP. A deduced beta/alpha ratio as low as 0.005 with an avalanche region of 1,550 nm is close to the theoretical minimum and is significantly smaller than that of silicon, with modelling suggesting that vertically illuminated APDs with a sensitivity of -25.7 dBm at a bit error rate of 1 x 10(-12) at 25 Gb s(-1) and 1,550 nm can be realized. These findings could yield a new breed of high-performance receivers for applications in networking and sensing.