Getter sputtering at low temperature (≃20 °K)
Getter sputtering at low temperature (≃20 °K)
复制标题
低温吸气溅射 (≃20 °K)
DOI：
10.1063/1.89969
复制
发表时间：
1978
影响因子：
4
通讯作者：
J. J. Hauser
中科院分区：
文献类型：
--
作者：
J. J. Hauser
在衬底温度低至18°K时，采用氦气溅射，使液氦在衬底表中循环。由于低沉积温度和获得溅射电流所需的高氦气压力，该技术在从通常为晶体的材料中生产非晶薄膜方面是有效的。
Getter sputtering with substrate temperatures as low as 18 °K was achieved by sputtering in helium gas with liquid helium circulating through the substrate table. This technique is effective in producing amorphous films from usually crystalline materials as a result of the low deposition temperature and of the high helium gas pressure necessary to obtain a sputtering current.