Low-temperature, solution-processed metal oxide thin film transistors
Low-temperature, solution-processed metal oxide thin film transistors
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DOI：
10.1039/c1jm14452a
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发表时间：
2012-01-01
影响因子：
--
通讯作者：
Moon, Jooho
中科院分区：
文献类型：
--
作者：
Jeong, Sunho;Moon, Jooho
高性能、溶液可加工的半导体在低成本、功能性电子应用中引起了极大的关注。金属氧化物半导体由于其电学特性和溶液可加工性而成为高性能电子器件中最有前途的构建模块。然而，金属氧化物半导体的主要障碍是适用于电子器件的电性能在高温下由化学/物理结构演变激活，这严重限制了实际应用。本文综述了与塑料衬底兼容的高性能低温氧化半导体的最新进展，并讨论了降低退火温度的化学/物理方法。
High-performance, solution-processable semiconductors have drawn significant attention for use in low-cost, functional electronic applications. Metal oxide semiconductors are the most promising building blocks for high performance electronic devices because of their electrical properties and solution-processability. However, the major impediment for metal oxide semiconductors is that the electrical properties applicable to electronic devices are activated by chemical/physical structural evolution at high temperatures, which critically limits the practical applications. This article reviews the recent progress in the development of high-performance oxide semiconductors processed at low temperatures which are compatible with plastic substrates and discusses the chemical/physical approaches to lower the annealing temperature.