Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes
Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes
复制标题
碳纳米管图案层对氮化镓基发光二极管的影响
DOI：
10.1088/1361-6641/abb183
复制
发表时间：
2020
影响因子：
1.9
通讯作者：
Yu T. J.
中科院分区：
文献类型：
--
作者：
Tian M. F.;Feng X. J.;Long H.;Ying L. Y.;Zhang B. P.;Wang K.;Yu T. J.
图案化蓝宝石衬底已广泛用于氮化镓（GaN）材料和相关发光器件（LED）的生长。近年来，利用碳纳米管图案化蓝宝石（CNTPS）来改进GaN材料和LED器件。本文对基于碳纳米管的发光二极管的本征分析进行了研究。三层碳纳米管上生长的LED显示出最高的辐射量子效率和内量子效率，而双层碳纳米管上生长的LED显示出最好的光输出功率和外量子效率。通过ABC模型模拟，揭示了CNT图案化LED中载流子注入、辐射、非辐射、俄歇复合和光提取等物理过程。
Patterned sapphire substrate has been used extensively in the growth of gallium nitride (GaN) material and related light emitting devices (LEDs). Recently, carbon nanotube patterned sapphire (CNTPS) was utilized to improve the GaN material and LED devices. In this article, intrinsic analyzation of LEDs on CNTPS were studied. LEDs grown on three layers of CNTs showed highest radiative quantum efficiency and internal quantum efficiency, while LEDs on double layers of CNTs exhibited the best light output power and external quantum efficiency. The physics of carriers’ injection, radiative, non-radiative, Auger recombination and light extraction in CNT patterned LEDs were unraveled by the ‘ABC’ modelsimulation.