MAGNETORESISTANCE OVER THE INTERMEDIATE LOCALIZATION REGIME IN GAAS/ALXGA1-XAS QUANTUM WIRES
MAGNETORESISTANCE OVER THE INTERMEDIATE LOCALIZATION REGIME IN GAAS/ALXGA1-XAS QUANTUM WIRES
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DOI：
10.1103/physrevb.48.4571
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发表时间：
1993-08-15
影响因子：
3.7
通讯作者：
PLOOG, K
中科院分区：
文献类型：
--
作者：
MANI, RG;VONKLITZING, K;PLOOG, K
在低温（0.04 < T < 2 K）、低磁场（B < 300 mT）输运研究中，GaAs/AlxGa1-xAs导线显示出由还原T引起的巨大负磁电阻，证实了一维局域化。磁电阻的描述为R(TB) = R0 + R1(T) + R2(T)/[1 + (B/DELTAB)2]，与T相关的项表现出幂律，R1(T)近似于T-1/2， R2(T)近似于T-1，分别是电子相互作用和量子干涉效应的特征。在最低T处，R1(T)和R2(T)饱和到一个与T无关的值，这表明在T(c)以下，通过减小T不能进一步增加有效导线长度。结果表明，在GaAs/AlxGa1-xAs量子线中，温度诱导了从D = 1到0的维度交叉。
A low-temperature (0.04 < T < 2 K), low-magnetic-field (B < 300 mT) transport study of GaAs/AlxGa1-xAs wires shows giant negative magnetoresistance, induced by reducing T, confirming one-dimensional localization. The magnetoresistance is described by R(TB) = R0 + R1(T) + R2(T)/[1 + (B/DELTAB)2], and the T-dependent terms exhibit power laws, R1(T) approximately T-1/2 and R2(T) approximately T-1, characteristic of electron interaction and quantum interference effects, respectively. At the lowest T, R1(T) and R2(T) saturate to a T-independent value indicating that the effective wire length may not be increased further by reducing T, below T(c). The results demonstrate a temperature-induced dimensional crossover, from D = 1 to 0, in GaAs/AlxGa1-xAs quantum wires.