Terahertz frequency response of an In0.53Ga0.47As/AlAs resonant‐tunneling diode
Terahertz frequency response of an In0.53Ga0.47As/AlAs resonant‐tunneling diode
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In0.53Ga0.47As/AlAs 谐振隧道二极管的太赫兹频率响应
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
T. Liu
中科院分区：
文献类型：
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作者：
J. Scott;J. Kaminski;M. Wanke;S. Allen;D. Chow;M. Lui;T. Liu
我们在UCSB使用自由电子激光器测量了高速In0.53Ga0.47As/AlAs共振隧穿二极管在120 GHz至3.9 THz范围内的室温宽带太赫兹响应。“整流"响应是用传统的探针台通过使用钨探针尖端作为触须天线来测量的。将共振隧穿机制中的整流响应与非共振响应归一化，我们去除了由天线和RC时间常数控制的非固有频率依赖性，并测量了固有弛豫时间。
We have measured the room‐temperature, broad‐band, terahertz response of a high‐speed In0.53Ga0.47As/AlAs resonant‐tunneling diode from 120 GHz to 3.9 THz using the free‐electron lasers at UCSB. The ‘‘rectified’’ response is measured with a conventional probe station by using the tungsten probe tip as a whisker antenna. Normalizing the rectified response in the resonant‐tunneling regime with the off‐resonant response we remove the extrinsic frequency dependence controlled by the antenna and the RC time constant and measure an intrinsic relaxation time.