Epitaxial hexagonal boron nitride with high quantum efficiency
Epitaxial hexagonal boron nitride with high quantum efficiency
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DOI：
10.1063/5.0142242
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发表时间：
2023-05
期刊：
影响因子：
6.1
通讯作者：
D. Laleyan;Woncheol Lee;Ying Zhao;Yuanpeng Wu;Ping Wang;Jun Song;E. Kioupakis;Z. Mi
中科院分区：
文献类型：
--
作者：
D. Laleyan;Woncheol Lee;Ying Zhao;Yuanpeng Wu;Ping Wang;Jun Song;E. Kioupakis;Z. Mi
二维（2D）六方氮化硼（h-BN）是少数几种在远紫外（UV）-C波长下显示出巨大前景的材料之一，其在遏制微生物疾病的传播方面比传统的UV光更有效和更安全。在这份报告中，我们观察到，h-BN，尽管具有间接的能带隙，表现出显着高的室温量子效率（约60%），这是数量级高于其他间接带隙材料，并通过强激子效应和有效的激子-声子相互作用。该研究为远紫外C光电子器件以及采用二维半导体有源区的量子光子器件的设计和开发提供了一种新的方法。
Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the few materials showing great promise for light emission in the far ultraviolet (UV)-C wavelength, which is more effective and safer in containing the transmission of microbial diseases than traditional UV light. In this report, we observed that h-BN, despite having an indirect energy bandgap, exhibits a remarkably high room-temperature quantum efficiency (∼60%), which is orders of magnitude higher than that of other indirect bandgap material, and is enabled by strong excitonic effects and efficient exciton-phonon interactions. This study offers a new approach for the design and development of far UV-C optoelectronic devices as well as quantum photonic devices employing 2D semiconductor active regions.