High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-Like Germanium on Glass
High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-Like Germanium on Glass
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DOI：
10.1002/aelm.201600041
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发表时间：
2016-08-01
影响因子：
6.2
通讯作者：
Ryou, Jae-Hyun
中科院分区：
文献类型：
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作者：
Asadirad, Mojtaba;Gao, Ying;Ryou, Jae-Hyun
报道了在柔性玻璃衬底上使用单晶类锗（Ge）沟道生长的薄膜晶体管（TFT），以同时实现高载流子迁移率、高性能特性、机械柔性和具有成本效益的大面积制造。高结晶质量材料的双轴织构CeO 2沉积在室温下通过离子束辅助沉积，然后在550 ℃下通过等离子体增强化学气相沉积在非晶衬底上外延生长的单晶状Ge。通过反射高能电子衍射、X射线衍射和拉曼光谱表征了具有{111}面的p型Ge在面外和面内两个方向上均表现出良好的晶粒取向。材料结构被制造成具有顶栅几何形状的晶体管器件。的设备（沟道宽度和长度= 80 μ m和14 μ m）表现出开/关比约为10（6）、场效应迁移率约为10（5）cm（2）V-1 s（-1）和饱和电流水平约为3.5mA的性能特性，其显著高于其它现有技术的基于非晶硅的TFT的性能指标，有机半导体和半导体氧化物。这一发展可以为下一代TFT开辟一条新的途径，超越显示应用。
Thin-film transistors (TFTs) grown on a flexible glass substrate using single-crystal-like germanium (Ge) channel to simultaneously achieve high carrier mobility, high performance characteristics, mechanical flexibility, and cost-effective large-area manufacturing are reported. High-crystalline-quality materials of biaxially textured CeO2 deposited at room temperature by ion-beam-assisted deposition followed by single-crystal-like Ge epitaxially grown at 550 degrees C by plasma-enhanced chemical vapor deposition on an amorphous substrate are developed. p-type Ge with {111} surface shows well-aligned grains in both out-of-plane and in-plane directions, as characterized by reflection high-energy electron diffraction, X-ray diffraction, and Raman spectroscopy. The material structures are fabricated to transistor devices with top-gate geometry. The devices (channel width and length = 80 and 14 mu m) exhibit performance characteristics with on/ off ratio of approximate to 10(6), a field-effect mobility of approximate to 10(5) cm(2) V-1 s(-1), and saturation current levels of approximate to 3.5 mA, which are significantly higher than performance metrics of other state-of-the-art TFTs based on amorphous Si, organic semiconductors, and semiconducting oxides. This development can open a new avenue for next-generation TFTs beyond the display applications.