Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors
Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors
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DOI：
10.7567/apex.9.031002
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发表时间：
2016-02
影响因子：
2.3
通讯作者：
T. Narita;A. Wakejima;T. Egawa
中科院分区：
文献类型：
--
作者：
T. Narita;A. Wakejima;T. Egawa
我们发现，Si 衬底附近的超晶格中的不均匀外延生长会在 AlGaN 表面和肖特基电极之间的界面处产生局部漏电流的区域。在这里，通过 AlGaN/GaN 高电子迁移率晶体管的透明栅极的电致发光 (EL) 使我们能够识别整个栅极外围的区域。此外，Si 衬底附近的超晶格支持清晰地观察到 EL 斑点下的不均匀生长。能量色散X射线光谱分析表明，富Ga层是在不均匀区域形成的早期阶段生长的。
We found that inhomogeneous epitaxial growth in a superlattice near a Si substrate creates an area where local leakage current occurs at the interface between an AlGaN surface and a Schottky electrode. Here, electroluminescence (EL) through a transparent gate of an AlGaN/GaN high-electron-mobility transistor enables us to identify the area in the entire gate periphery. Further, the superlattice near the Si substrate supports clear observation of inhomogeneous growth under the EL spots. The energy-dispersive X-ray spectroscopy profile indicates that a Ga-rich layer was grown in the early stage of inhomogeneous area creation.