Electrodeposition of InAs
Electrodeposition of InAs
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DOI：
10.1149/1.1390925
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发表时间：
1999-12
影响因子：
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通讯作者：
T. Wade;L. C. Ward;Clinton B. Maddox;U. Happek;J. Stickney
中科院分区：
文献类型：
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作者：
T. Wade;L. C. Ward;Clinton B. Maddox;U. Happek;J. Stickney
我们报道了在室温下直接电沉积InAs薄膜。沉积采用了原子层外延的电化学模拟方法。通过交替电沉积In和As原子层，在似乎是表面受限的条件下(欠电位沉积)，形成了厚达160 nm的InAs薄膜。用原子力显微镜、X射线衍射仪、椭偏仪和红外吸收对所得薄膜进行了表征。S1099-0062(99)06-035-6。版权所有。
We report on the direct electrodeposition of InAs films at room temperature. The electrochemical analog of atomic layer epitaxy was used to form the deposits. Up to 160 nm thick films of InAs were formed by the alternating electrodeposition of atomic layers of In and As, under what appear to be surface limited conditions (underpotential deposits). The films obtained were characterized using atomic-force microscopy, X-ray diffraction, ellipsometry, and infrared absorption.© 1999 The Electrochemical Society. S1099-0062 (99) 06-035-6. All rights reserved.