High-Yield Synthesis of Ultrathin Metal Nanowires in Carbon Nanotubes
High-Yield Synthesis of Ultrathin Metal Nanowires in Carbon Nanotubes
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DOI:
10.1002/anie.200902615
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发表时间:
2009-01-01
影响因子:
16.6
通讯作者:
Shinohara, H.
中科院分区:
文献类型:
--
作者:
Kitaura, R.;Nakanishi, R.;Shinohara, H.
Electrons confined in low-dimensional nanostructures show various novel physical properties owing to quantum effects that could lead to applications in nanoelectronic devices.[1] To enhance such properties, the nanostructures need to be very small and have high aspect ratios, and, thus, the synthesis of atomically thin nanowires is one of the most intriguing topics in materials science. However, such an ultrathin nanowire is always not stable because of the intrinsic structural instability and high chemical reactivity. Therefore, in addition to the high-yield controlled synthesis of such nanowires, its concomitant structural stabilization is of key importance. For this purpose, we have focused on a direct nanofilling reaction using the pseudo-one-dimensional nanospace of carbon nanotubes (CNTs).The chemically and mechanically stable pseudo-1D hollow nanospace of CNTs ranging in size from 0.4 to 50 nm across can act as an ideal nanosized space for the selfassembly of various nanostructures. In fact, several studies on the formation of nanoclusters and nanowires in CNTs have been reported over the past couple of decades.[2] However, the formation of atomically thin nanowires inside CNTs in high yield has been difficult to date. We have developed a simple and effective synthetic procedure, whereby ultrathin nanowires of typically 1–4 atomic chains are synthesized with a high filling fraction (typically> 80%) in both single-wall CNTs (SWCNTs) and double-wall CNTs (DWCNTs). These nanowires are completely protected by surrounding walls of CNTs and are therefore free from oxidation as well as from structural decomposition under ambient air environments and even after ultrasonication in solution. This result is in marked contrast to previously reported metal nanowires, especially to the so-called single atomic nanowires, which can survive for only a very short period of time even under ultrahigh vacuum conditions.[3] Furthermore, the present method to prepare ultrathin metal nanowires in CNTs can