Electron and hole drift velocity in chemical vapor deposition diamond
Electron and hole drift velocity in chemical vapor deposition diamond
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DOI：
10.1063/1.3554721
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发表时间：
2011-03-15
影响因子：
3.2
通讯作者：
Isberg, Jan
中科院分区：
文献类型：
--
作者：
Gabrysch, Markus;Majdi, Saman;Isberg, Jan
利用飞行时间技术测量了高纯度CVD单晶金刚石中电子和空穴的漂移速度。测量是在温度区间内进行的
The time-of-flight technique has been used to measure the drift velocities for electrons and holes in high-purity single-crystalline CVD diamond. Measurements were made in the temperature interval 83