Comparative study on drive current of III-V semiconductor, Ge and Si channel n-MOSFETs based on quantum-corrected Monte Carlo simulation
Comparative study on drive current of III-V semiconductor, Ge and Si channel n-MOSFETs based on quantum-corrected Monte Carlo simulation
复制标题
DOI：
10.1109/tnano.2007.915002
复制
发表时间：
2008-03-01
影响因子：
2.4
通讯作者：
Miyoshi, Tanroku
中科院分区：
文献类型：
--
作者：
Mori, Takashi;Azuma, Yusuke;Miyoshi, Tanroku
近年来，各种新型沟道材料被广泛研究，以实现n沟道MOSFET驱动电流的持续增强。在本文中，我们进行了量子校正蒙特卡罗器件模拟，以研究新的沟道材料，如III-V族化合物半导体和Ge的优势，考虑散射效应，量子力学效应，和新的器件结构。然后，我们发现随着沟道长度的减小，所有材料都收敛到相似的电流水平，但在准弹道输运下，具有（111）表面取向的Ge-MOSFET和InP-MOSFET提供了比其他材料更高的驱动电流。此外，我们还证明了降低源极和漏极区的寄生电阻对于保持III-V族材料的明确优势是必不可少的。
Recently, a variety of new channel materials have been intensively studied to achieve a continuous enhancement in drive current of n-channel MOSFETs. In this paper, we performed a quantum-corrected Monte Carlo device simulation to examine advantages of new channel materials such as III-V compound semiconductors and Ge, by considering scattering effects, quantum mechanical effects, and new device structure. Then, we found that all materials converge to the similar current level as the channel length decreases, but Ge-MOSFET with (1 1 1) surface orientation and InP-MOSFET provide higher drive current than the other materials under the quasi-ballistic transport. Furthermore, we demonstrated that the reduction of parasitic resistance in source and drain regions will be indispensable to maintain a definite advantage of III-V materials.