Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
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X 射线反射率与卢瑟福背散射光谱在薄膜密度测量中的相关性
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
T. Arai
中科院分区：
文献类型：
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作者：
K. Nakajima;S. Aoki;S. Sudo;Munehiro Mondo;H. Kudo;S. Fujiwara;T. Arai
通过X射线反射率测量和卢瑟福背散射光谱（RBS）检测了镍膜的密度。在高真空系统中通过电子束蒸发沉积Ni薄膜，并退火以改变其密度。所沉积的膜的密度为7.8±0.1 g/cm 3。X射线反射率测量和RBS之间具有良好的相关性。
The film density of nickel was examined by means of X-ray reflectivity measurement and Rutherford backscattering spectroscopy (RBS). The Ni thin film was deposited by electron beam evaporation in a high-vacuum system and was annealed to change its density. The density of the as-deposited film was 7.8±0.1 g/cm3. A good correlation between the X-ray reflectivity measurement and RBS was demonstrated.