Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure
Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure
复制标题
单片集成 780 nm 波段高功率和 650 nm 波段激光二极管，具有真实折射率引导自对准结构
DOI：
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发表时间：
2001
影响因子：
2.6
通讯作者：
H. Shimizu
中科院分区：
文献类型：
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作者：
T. Onishi;O. Imafuji;T. Fukuhisa;A. Mochida;Y. Kobayashi;M. Yuri;K. Itoh;H. Shimizu
首次将真实的折射率引导自对准（RISA）结构的780 nm波段高功率和650 nm波段半导体激光器（LD）单片集成。在780 nm波段的LD中，获得了连续波（CW）输出功率为100 mW、温度为80/spl deg/C的高功率基横模运转。对于650 nm波段的LD，高温和基横模工作在10 mW CW输出功率高达80/spl deg/C。
780-nm-band high-power and 650-nm-band laser diodes (LDs) with real refractive index guided self-aligned (RISA) structures are monolithically integrated for the first time. High-power and fundamental transverse mode operation at an output power of 100-mW continuous wave (CW) up to 80/spl deg/C is attained for the 780-nm-band LD. For the 650-nm-band LD, high temperature and fundamental transverse mode operation at an output power of 10-mW CW up to 80/spl deg/C is obtained.