Deposition of Device Quality, Low H Content a-Si:H by the Hot Wire Technique
Deposition of Device Quality, Low H Content a-Si:H by the Hot Wire Technique
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通过热丝技术沉积器件质量、低 H 含量 a-Si:H
DOI：
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发表时间：
1991
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通讯作者：
R. Crandall
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作者：
A. Mahan;B. Nelson;S. Salamon;R. Crandall
我们报告了通过热丝辅助化学气相沉积 (HW) 沉积的一系列氢化非晶硅 (a-Si:H) 薄膜的 Urbach 边缘和带隙态密度的测量结果。我们将这些薄膜的特性与通过传统射频 (rf) 辉光放电 (GD) 技术沉积的一系列 a-Si:H 薄膜的特性进行了比较，其中我们通过改变衬底温度来改变键合的 H 含量 (CH)。我们首次表明，当 CH 降低到传统上与器件质量 GD a-Si:H (∼10 at.%) 相关的值以下时，GD 薄膜的电子性能会以传统方式恶化，而 HW 样品的电子性能仍保持器件质量。将展示这些低 CH HW 样品的特性，并将其与含有相当 CH 的 GD 薄膜进行比较。由于多种迹象表明 HW 薄膜的结构与 GD 薄膜的结构不同，因此采用拉曼和小角 X 射线散射 (SAXS) 测量来说明结构差异。
We report measurements of the Urbach edge and density of gap states on a series of hydrogenated amorphous silicon (a-Si:H) films deposited by hot-wire-assisted chemical vapor deposition (HW). We compare the properties of these films to those of a series of a-Si:H films deposited by the traditional radio frequency (rf) glow discharge (GD) technique, where we varied the substrate temperature to change the bonded H content (CH). We show for the first time that, as CH is decreased below the value traditionally associated with device quality GD a-Si:H (∼10 at.%), the electronic properties of the GD films deteriorate in the traditional manner while those for the HW samples remain device quality. Properties of these low CH HW samples will be presented and compared to those of GD films containing comparable CH. Because several indications exist that the structure of the HW films is different than that of the GD films, Raman and Small Angle X-Ray Scattering (SAXS) measurements are presented to illustrate structural differences.