Silicene nanomesh.
Silicene nanomesh.
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硅烯纳米网
DOI：
10.1038/srep09075
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发表时间：
2015-03-13
影响因子：
4.6
通讯作者：
Lu J
中科院分区：
文献类型：
--
作者：
Pan F;Wang Y;Jiang K;Ni Z;Ma J;Zheng J;Quhe R;Shi J;Yang J;Chen C;Lu J
与石墨烯类似，尽管硅烯具有高载流子迁移率，但零带隙限制了其在纳米电子学中的应用。通过第一性原理计算，我们揭示了当相邻空穴之间的壁宽W为偶数时，硅烯纳米网（SNM）中的带隙是开放的。带隙的大小随W的减小而增大，并与硅原子的去除率和硅烯的总硅原子数的比值有简单的关系。量子输运模拟表明，亚10纳米单栅SNM场效应晶体管在零温下表现出优异的性能，但在室温下这种性能大大下降。
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.