Stress map for ion irradiation: Depth-resolved dynamic competition between radiation-induced viscoelastic phenomena in SiO2
Stress map for ion irradiation: Depth-resolved dynamic competition between radiation-induced viscoelastic phenomena in SiO2
复制标题
离子辐照应力图：SiO2 中辐射引起的粘弹性现象之间的深度分辨动态竞争
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
A. Polman
中科院分区：
文献类型：
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作者：
T. V. Dillen;M. Y. S. Siem;A. Polman
结构转换，牛顿粘性流，和各向异性应变产生的离子辐照过程中的SiO2之间的动态竞争，导致强烈的深度依赖的演化的机械应力，压缩和拉伸之间的范围。从独立的原位应力测量在辐照过程中，通用表达式的核停止依赖的结构转变率和辐射诱导的粘度。使用这些数据，我们介绍和演示的概念的“应力图”，预测的深度分辨的饱和应力SiO2的任何照射高达几兆电子伏。
The dynamic competition between structural transformation, Newtonian viscous flow, and anisotropic strain generation during ion irradiation of SiO2, leads to strongly depth-dependent evolution of the mechanical stress, ranging between compressive and tensile. From independent in situ stress measurements during irradiation, generic expressions are derived of the nuclear stopping dependence of both the structural transformation rate and the radiation-induced viscosity. Using these data we introduce and demonstrate the concept of a “stress map” that predicts the depth-resolved saturation stress in SiO2 for any irradiation up to several MeV.