Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures
Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures
复制标题
在低维量子阱结构中利用场致电光效应的 GaInAs(P)-InP 交叉光开关的工作波长范围
DOI：
10.1109/3.123275
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发表时间：
1992
影响因子：
2.5
通讯作者：
Y. Suematsu
中科院分区：
文献类型：
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作者：
K. Shimomura;S. Arai;Y. Suematsu
从理论上分析了由量子盒、量子线、量子膜结构等低维量子阱结构组成的GaInAs(P)-InP交叉光开关的低插入损耗和高消光比的工作波长范围。研究发现，低维量子阱结构可以获得优异的工作特性。例如，使用量子盒结构的器件可以获得约10 nm的工作波长范围，插入损耗小于1 dB，消光比高于50 dB。 >
Operational wavelength range for low insertion loss and high extinction ratio of GaInAs(P)-InP intersectional optical switches consisting of low-dimensional quantum-well structures, such as quantum-box, quantum-wire, and quantum-film structures, is theoretically analyzed. It is found that superior operation characteristics can be attained with the lower-dimensional quantum-well structure. For instance, an operational wavelength range of around 10 nm for an insertion loss less than 1 dB and an extinction ratio higher than 50 dB can be obtained with the device using a quantum-box structure. >
K.G.Ravikumar：“GaInAs/InP 量子线结构中的场致折射率变化光谱”应用物理快报。
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