Spectroscopic study of gas and surface phase chemistries of CF4 plasmas in an inductively coupled modified gaseous electronics conference reactor
Spectroscopic study of gas and surface phase chemistries of CF4 plasmas in an inductively coupled modified gaseous electronics conference reactor
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电感耦合改进气态电子会议反应器中 CF4 等离子体的气体和表面相化学的光谱研究
DOI：
10.1116/1.2138718
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
M. Goeckner
中科院分区：
文献类型：
--
作者：
Baosuo Zhou;E. Joseph;L. Overzet;M. Goeckner
采用多程白色池增强的原位傅里叶变换红外光谱和原位椭圆偏振光谱，在电感耦合改进的气体电子学会议参考池中研究了CF4等离子体的气相和表面相化学。自偏置直流电压，气体物种的密度，硅衬底上的氟碳膜厚度，以及二氧化硅和硅的蚀刻速率进行了测量，在等离子体处理过程中的压力，CF4气体流量，射频源功率，压板偏置功率，和源压板间隙的函数。监测的气体分子和自由基包括CF4，CF3，CF2，SiF4和COF2，其中CF4和SiF4被发现是两个主要的物种，结合约80%的总浓度。SiF_4和COF_2的密度比在衬底上没有偏压时约为2：1，并且当Si衬底发生蚀刻时增加到约8：1。具体地说，随着Si蚀刻速率的增加，COF2密度下降，可能是由于抑制了硅的蚀刻。
Gas and surface phase chemistries of CF4 plasma were studied in an inductively coupled modified gaseous electronics conference reference cell, using in situ Fourier transform infrared spectroscopy enhanced by a multipass White cell and in situ spectroscopic ellipsometry. The self-bias dc voltage, densities of gaseous species, fluorocarbon film thickness on Si substrate, as well as etch rates of SiO2 and Si were measured during plasma processing as functions of the pressure, CF4 gas flow rate, rf source power, platen bias power, and source-platen gap. The gaseous molecules and radicals monitored included CF4, CF3, CF2, SiF4, and COF2, among which CF4 and SiF4 were found to be the two dominant species, combining for about 80% of the total concentration. The density ratio of SiF4 and COF2 was about 2:1 with no bias on the substrate and increased up to ∼8:1 when Si substrate etching took place. Specifically, as the Si etch rate increased, the COF2 density dropped, likely due to suppressed etching of the quart...