Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment
Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment
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采用高密度低能量离子轰击在低温下生长先进栅极电介质的氮化硅薄膜
DOI：
10.1116/1.582016
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
K. Sekine;Yuji Saito;M. Hirayama;T. Ohmi
硅表面的直接氮化可以在低至430 °C的温度下通过使用具有低于7 eV的低离子轰击能量的高于1012 cm−3的高密度等离子体来实现。 这项研究表明，通过精确控制氮分压，在等离子体中产生N2+，可以首次在400 °C的温度下获得化学计量的氮化硅。 此外，在电容-电压数据，已归因于氮化硅膜中的电荷陷阱的滞后可以显着减少通过添加氢到Ar/N2等离子体终止悬空键与氢。氮化硅薄膜的介电强度与热生长氮化硅和氧化硅薄膜的介电强度几乎相当。与热生长氧化硅相比，即使它们的等效厚度相等，氮化硅膜的漏电流也显著降低。氮化硅薄膜几乎没有应力引起的漏电流，即使在高温下也几乎没有陷阱产生。
Direct nitridation of silicon surface can be realized at a temperature as low as 430 °C by using high-density plasma above 1012 cm−3 featuring low ion bombardment energy below 7 eV. This study shows that stoichiometric silicon nitride can be obtained for the first time at a temperature of 400 °C by precise control of the nitrogen partial pressure to generate N2+ in the plasma. Moreover, hysteresis in the capacitance–voltage data that has been attributed to charge traps in silicon nitride film can be reduced dramatically by adding hydrogen to Ar/N2 plasma for terminating dangling bonds with hydrogen. The dielectric strength of silicon nitride films is nearly equivalent to those of thermally grown silicon nitride and silicon oxide. The leakage current of silicon nitride film is dramatically reduced compared to that of thermally grown silicon oxide even if their equivalent thicknesses are equal. The silicon nitride films have almost no stress-induced leakage current and very little trap generation even in hi...