LOCALIZED EXCITONS AND BREAKING OF CHEMICAL-BONDS AT III-V (110)SURFACES
LOCALIZED EXCITONS AND BREAKING OF CHEMICAL-BONDS AT III-V (110)SURFACES
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DOI:
10.1103/physrevlett.75.701
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发表时间:
1995-07-24
影响因子:
8.6
通讯作者:
SCHEFFLER, M
中科院分区:
文献类型:
--
作者:
PANKRATOV, O;SCHEFFLER, M
Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results reveal formation of autolocalized Frenkel-type excitons which merge in microscopic ''droplets'' due to attraction initiated by exciton-induced unrelaxation of the surface. A substantial weakening of the bonding of the topmost Ga atom is found in such an ''exciton droplet.'' This finding suggests a microscopic mechanism of laser-induced emission of the neutral Ga atoms from GaAs and GaP (110) surfaces.