Effects of substrate temperature on the microstructure and photoluminescence properties of ZnO thin films prepared by atomic layer deposition
Effects of substrate temperature on the microstructure and photoluminescence properties of ZnO thin films prepared by atomic layer deposition
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DOI：
10.1016/j.tsf.2006.09.007
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发表时间：
2007-02-26
期刊：
影响因子：
2.1
通讯作者：
Lee, Chongmu
中科院分区：
文献类型：
--
作者：
Lim, Jongmin;Lee, Chongmu
原子层沉积(ALD)是一种非常有前景的化合物半导体薄膜沉积技术。然而，关于氧化锌-碱性磷酸酶的报道却很少。采用X射线衍射、光致发光和扫描电子显微镜分析技术研究了衬底温度对氧化锌薄膜微结构和光致发光性能的影响.结果表明，在除温度窗口外的温度范围内，ALD窗口为130-180℃.在此温度范围内，随着衬底温度的升高，薄膜的生长速率增加.在ALD的所有工艺参数中，衬底温度对晶体质量的影响最大。通过增加每个ALD循环的处理时间或进行后退火处理，可以提高薄膜的结晶度。随着热处理温度从600℃升高到1000℃，氧化锌薄膜的颗粒尺寸趋于增大，颗粒形状由蠕虫状变长为圆形。(C)2006年爱思唯尔公司版权所有。
Atomic layer deposition (ALD) is a very promising deposition technique for compound semiconductor films such as ZnO. However, there have been very few reports on ZnO-ALD. Effects of substrate temperature on the microstructure and photoluminescence (PL) properties of ZnO thin films were investigated using X-ray diffraction, PL and scanning electron microscopy analysis techniques.The ALD window is found to be 130-180 degrees C. The ZnO film growth rate in ALD increases as the substrate temperature increases in the temperature range except the temperature window. The crystal quality depends most strongly upon the substrate temperature among all the process parameters of ALD. The crystallinity of the ZnO thin film is improved by increasing the process time per ALD cycle or doing post-annealing treatment. The grain size of the ZnO film tends to increase and the grain shape tends to change from a worm-like longish shape to a round one as the annealing temperature increases from 600 to 1000 degrees C. (c) 2006 Elsevier B.V All rights reserved.