Bridge Type Josephson Junctions in MO-CVD Thin Films
Bridge Type Josephson Junctions in MO-CVD Thin Films
复制标题
MO-CVD 薄膜中的桥式约瑟夫森结
DOI：
10.1143/jjap.28.l1581
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
T. Hirai
中科院分区：
文献类型：
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作者：
S. Noge;T. Yamashita;Zhen Wang;T. Matsui;H. Kurosawa;H. Yamane;T. Hirai
用Y_1Ba_2Cu_3O_（7-x）薄膜制作了桥式约瑟夫森结。用MOCVD方法在（100）MgO衬底上沉积了Y_1Ba_2Cu_3O_（7-x）薄膜。这些薄膜在86 K下表现出零电阻，在77 K下表现出104至105 A/cm 2的临界电流密度。研究了射频辐照对桥梁结构的影响。对于X波段辐射，在77 K下观察到高达800 µV的尖锐微波诱导台阶。在毫米波（101 GHz）和亚毫米波（303 GHz）频率下也观察到清晰的Shapiro台阶。结果表明，用MOCVD方法制备的薄膜桥具有理想的交流约瑟夫森效应。
Using Y1Ba2Cu3O7-x thin films, bridge type Josephson junctions are fabricated. Thin films of Y1Ba2Cu3O7-x on (100) MgO substrates are deposited by the MO-CVD method. These films exhibit zero resistance at 86 K, and a critical current density of 104 to 105 A/cm2 at 77 K. The effect of radio frequency irradiations to the bridge are investigated. Sharp microwave-induced steps are observed up to 800 µV at 77 K for X band irradiation. Clear Shapiro steps are also observed at the millimeter (101 GHz) and submillimeter frequency (303 GHz). The results demonstrate that the thin film bridges made by MO-CVD show an ideal ac Josephson effect.