Single-Digit-Nanometer Capacitive-Gap Transduced Micromechanical Disk Resonators
Single-Digit-Nanometer Capacitive-Gap Transduced Micromechanical Disk Resonators
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DOI：
10.1109/mems46641.2020.9056204
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发表时间：
2020-01
期刊：
影响因子：
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通讯作者：
A. Ozgurluk;Kieran Peleaux;C. Nguyen
中科院分区：
文献类型：
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作者：
A. Ozgurluk;Kieran Peleaux;C. Nguyen
一位数纳米电极-谐振器间隙使得200-MHz径向轮廓模式多晶硅盘谐振器具有低至144 Ω的动态电阻R_{x}$，同时仍然张贴超过10，000的Q$，所有都只有2.5V直流偏置，所展示的间隙间距低至7.98 nm，是迄今为止最小的上限-VHF微机械谐振器，并充分利用了动电阻对间隙间距的四次方依赖性。高器件成品率和易于测量的特性，揭穿了通常与微小间隙相关的常见的假设陷阱，例如，隧道效应，卡西米尔力，低屈服，这些都没有出现然而，这些器械在未包装时更容易受到环境污染。微小的动态电阻，加上在4.7V直流偏置下高达1%的$（C_{x}/C_{o}）$和超过100的$（C_{x}/C_{o}）-Q$乘积，将多晶硅电容间隙转换谐振器技术推向了MEMS谐振器应用的前沿，这些谐振器应用对噪声性能有很高的要求，例如雷达振荡器。
Single-digit-nanometer electrode-to-resonator gaps have enabled 200-MHz radial-contour mode polysilicon disk resonators with motional resistance $R_{x}$ as low as $144\Omega$ while still posting $Q$'s exceeding 10,000, all with only 2.5V dc-bias, The demonstrated gap spacings down to 7.98nm are the smallest to date for upper-VHF micromechanical resonators and fully capitalize on the fourth power dependence of motional resistance on gap spacing. High device yield and ease of measurement debunk popular prognosticated pitfalls often associated with tiny gaps, e.g., tunneling, Casimir forces, low yield, none of which appear. The devices, however, are more susceptible to environmental contamination when unpackaged. The tiny motional resistance, together with $(C_{x}/C_{o})$'s up to 1% at 4.7V dc-bias and $(C_{x}/C_{o})-Q$ products exceeding 100, propel polysilicon capacitive-gap transduced resonator technology to the forefront of MEMS resonator applications that put a premium on noise performance, such as radar oscillators.