300 V Field-MOS FETs for HV-switching IC
300 V Field-MOS FETs for HV-switching IC
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DOI：
10.1109/ispsd.2011.5890785
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发表时间：
2011-05
期刊：
影响因子：
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通讯作者：
T. Miyoshi;T. Tominari;M. Hayashi;A. Ito;M. Yoshinaga;S. Ueno;T. Oshima;S. Wada
中科院分区：
文献类型：
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作者：
T. Miyoshi;T. Tominari;M. Hayashi;A. Ito;M. Yoshinaga;S. Ueno;T. Oshima;S. Wada
我们开发了用于高压开关 IC 的 300 V 场 MOS FET。 Field-NMOS/PMOS FET 的击穿电压分别为 410 V/370 V，比导通电阻分别为 1845/11000 mΩ·mm2。垂直和横向电场均经过优化，可在较宽的衬底电压范围内最大化击穿电压，并通过引入场板和扩展漏极层来优化器件布局，从而最小化特定导通电阻。该技术可应用于300V高压开关IC，具有低漏电流和低开关电阻。
We have developed 300 V Field-MOS FETs for High-Voltage switching IC. The breakdown voltages are 410 V/370 V with specific on-resistance of 1845/11000 mΩ·mm2 for Field-NMOS/PMOS FETs, respectively. The vertical and lateral electric fields are both optimized to maximize a breakdown voltage at wide range of substrate voltages and minimize a specific on-resistance with a device layout optimization by introducing a Field Pate and a Extended-Drain layer. This technology can apply to 300 V High-Voltage switching IC with a low leak current and a low switching resistance.