Low loss germanium-on-silicon waveguides for integrated mid-infrared photonics
Low loss germanium-on-silicon waveguides for integrated mid-infrared photonics
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DOI：
10.1117/12.2510009
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发表时间：
2019-03
期刊：
影响因子：
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通讯作者：
R. Millar;K. Gallacher;U. Griskeviciute;L. Baldassarre;M. Sorel;M. Ortolani;D. Paul
中科院分区：
文献类型：
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作者：
R. Millar;K. Gallacher;U. Griskeviciute;L. Baldassarre;M. Sorel;M. Ortolani;D. Paul
低损耗Ge-on-Si波导在8 - 14 μm大气传输窗口中得到验证，该技术将能够检测和传感独特的分子振动。这种低成本平台将在污染监测、爆炸物检测和护理点诊断等关键市场中得到应用。利用电子束光刻和干法刻蚀制作了脊形波导。利用法布里-珀罗（Fabry-Perot）技术对波导的传输损耗进行了表征，在7.5 ~ 11 μm波长范围内，损耗小于5dB/cm，最低可达~ 1dB/cm。使用实验测量的Si衬底损耗，和从分析模型计算的散射损耗的贡献进行了分析。结果验证了Ge-on-Si平台用于中红外光子学和传感集成的可行性。
Low loss Ge-on-Si waveguides are demonstrated in the 8 – 14 μm atmospheric transmission window, a technology that will enable detection and sensing of unique molecular vibrations. Such a low cost platform would have applications in key markets such as pollution monitoring, explosives detection and point of care diagnostics. Rib-waveguides are fabricated using electron beam lithography and dry etching. The waveguides propagation losses are characterized using the Fabry-Perot technique, and are found to be below 5 dB/cm across the measurement range of 7.5 to 11 μm wavelength, reaching as low as ~ 1 dB/cm. The contribution to the losses are analyzed using the experimentally measured Si substrate losses, and the calculated scattering losses from an analytical model. The results verify the feasibility of the Ge-on-Si platform for integrated mid-infrared photonics and sensing.