Impact of the Meissner effect on magnetic microtraps for neutral atoms near superconducting thin films
Impact of the Meissner effect on magnetic microtraps for neutral atoms near superconducting thin films
复制标题
迈斯纳效应对超导薄膜附近中性原子磁微阱的影响
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
J. Fort'agh
中科院分区：
文献类型：
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作者：
D. Cano;B. Kasch;H. Hattermann;D. Koelle;R. Kleiner;C. Zimmermann;J. Fort'agh
我们从理论上计算了超导薄膜附近磁场引起的磁势变化。对一个基于三线结构的原子芯片进行了超导态和正常导电态的仿真。利用基于伦敦理论的能量最小化方法计算了超导导线内的非均匀电流密度。迈斯纳效应在离超导表面很近的地方引起陷阱位置和振荡频率的变化。超导导线产生的微阱比普通导线浅得多。本文的结果表明，在超导表面附近的磁捕获中性原子的设计和实验中，考虑迈斯纳效应的重要性。
We theoretically evaluate changes in the magnetic potential arising from the magnetic field near superconducting thin films. An example of an atom chip based on a three-wire configuration has been simulated in the superconducting and the normal conducting state. Inhomogeneous current densities within the superconducting wires were calculated using an energy-minimization routine based on the London theory. The Meissner effect causes changes to both trap position and oscillation frequencies at short distances from the superconducting surface. Superconducting wires produce much shallower microtraps than normal conducting wires. The results presented in this paper demonstrate the importance of taking the Meissner effect into account when designing and carrying out experiments on magnetically trapped neutral atoms near superconducting surfaces.