Interface roughness in Fe(100)/Cr film structures studied by CEMS
Interface roughness in Fe(100)/Cr film structures studied by CEMS
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DOI：
10.1016/s0304-8853(96)00063-7
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发表时间：
1996-08-01
影响因子：
2.7
通讯作者：
Zinn, W
中科院分区：
文献类型：
--
作者：
Klinkhammer, F;Sauer, C;Zinn, W
在MgO（100）和GaAs（100）衬底上外延生长了不同结构的Fe（100）/Cr薄膜，以改善Fe/Cr界面的粗糙度。通过在界面处引入2层厚的Fe-57探针层，利用Fe-57转换电子穆斯堡尔谱（GEMS）可以局部测量超精细磁场的分布。应用一个简单的模型，它允许从这个高频场分布的平均界面粗糙度的图案的确定。据观察，即使样品的高外延质量，根据LEED和RHEED揭示了微观粗糙度的横向尺度为1-2纳米，由于混合的Fe和Cr在1-2个单层。
Various epitaxial Fe(100)/Cr film structures were MBE-grown on MgO(100) and GaAs(100) substrates with the aim to modify the roughness of the Fe/Cr interfaces. By introducing a 2 monolayer thick Fe-57 probe layer at the interface the distribution of the magnetic hyperfine (hf) fields could be measured locally by means of Fe-57 conversion electron Mossbauer spectroscopy (GEMS). A simple model is applied which allows the determination of a pattern of the average interface roughness from this hf field distribution. It was observed that even samples of high epitaxial quality according to LEED and RHEED reveal a micro-roughness on a lateral scale of 1-2 nm due to intermixing of Fe and Cr within 1-2 monolayers.