Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes
Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes
复制标题
离子非晶化 (0001) 6H–SiC 的氧化动力学：氧化和重结晶过程之间的竞争
DOI：
10.1063/1.1887820
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发表时间：
2005
影响因子：
4
通讯作者：
S. Solmi
中科院分区：
文献类型：
--
作者：
A. Poggi;A. Parisini;R. Nipoti;S. Solmi
本文研究了Ar ~+注入非晶化的（0001）Si面6 H-SiC在750 ~ 950°C范围内的湿氧化。电子显微镜分析已被执行，以获得在氧化过程中的非晶层的演变信息。无定形衬底的氧化速率与时间呈线性关系，假定值VOx（α）=3.8× 107 exp（−1.6 scinkT）nm scinmin。由于在非晶层的两个相对面处发生伴随的氧化和再结晶过程，对于几百纳米的非晶层厚度和几十分钟的处理时间，该表达式在高达约910°C下有效。在较高的温度下，我们的氧化数据支持存在的突然增加的重结晶，强烈减少的非晶区的生存时间，因此，氧化物的厚度。确定的程序，任何固定的非晶厚度，最合适的实验条件引起…
The wet oxidation of (0001) Si face 6H–SiC preamorphized by Ar+ implantation has been investigated in the temperature range between 750 and 950°C. Electron microscopy analysis has been performed to obtain information on the evolution of the amorphous layer during the oxidation process. The oxidation rate of the amorphous substrate is linear in time and assumes the value VOx(α)=3.8×107exp(−1.6∕kT)nm∕min. Due to the concomitant oxidation and recrystallization processes occurring at the two opposite faces of the amorphous layer, this expression is valid up to about 910°C for amorphous layer thickness of a few hundreds nanometer and processing time of a few tens of minutes. At higher temperatures, our oxidation data support the existence of a sudden increasing of the recrystallization that strongly reduces the time of surviving of the amorphous region and, consequently, the oxide thickness. The procedure to determine, for any fixed amorphous thickness, the most suitable experimental conditions giving rise to ...