Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs
Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs
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DOI：
10.1109/ted.2013.2255878
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发表时间：
2013-06-01
影响因子：
3.1
通讯作者：
Taur, Yuan
中科院分区：
文献类型：
--
作者：
Xie, Qian;Lee, Chia-Jung;Taur, Yuan
本文分析了超薄 SOI MOSFET 中的二维短沟道效应。从一系列数值模拟装置的横向场斜率中提取经验的、与通道长度相关的尺度长度。我们展示了该标度长度与短沟道阈值电压滚降和带或不带衬底偏置的最小沟道长度之间的关系。根据硅膜中反转电荷的场和分布来研究和理解反向衬底偏压的好处。特别是，当在背面形成累积层时如何实现块状短沟道效应。此外，还研究了高卡伯栅极绝缘体的影响并讨论了缩放影响。
This paper analyzes the 2-D short-channel effect in ultrathin SOI MOSFETs. An empirical, channel length-dependent scale length is extracted from the lateral field slope of a series of numerically simulated devices. We show how this scale length is related to the short-channel threshold voltage roll-off and minimum channel length with and without a substrate bias. The benefit of a reverse substrate bias is investigated and understood in terms of the field and distribution of inversion charge in the silicon film. In particular, how a bulk-like short-channel effect is achieved when an accumulation layer is formed at the back surface. Furthermore, the effect of a high-kappa gate insulator is studied and scaling implications discussed.