Characteristics of the interfaces and the properties of chromium oxide nanolayers on gallium arsenide
Characteristics of the interfaces and the properties of chromium oxide nanolayers on gallium arsenide
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DOI：
10.1134/s1063783407090065
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发表时间：
2007-09-01
影响因子：
0.6
通讯作者：
Egorov, A. L.
中科院分区：
文献类型：
--
作者：
Ezhovskii, Yu. K.;Egorov, A. L.
本文报道了在GaAs（100）和GaAs（110）表面上通过分子逐层生长（原子层沉积）合成的氧化铬纳米结构层（纳米结构）的电学性质的研究结果。它是建立的合成条件和层的组成影响的特性的半导体-电介质界面。
This paper reports on the experimental results of investigations into the electrical properties of chromium oxide ultrathin layers (nanostructures) synthesized on the GaAs(100) and GaAs(110) surfaces through the molecular layer-by-layer growth (atomic layer deposition). It is established that the synthesis conditions and the layer composition affect the characteristics of the semiconductor-dielectric interface.