Comparative study of Ti∕Al∕Mo∕Au, Mo∕Al∕Mo∕Au, and V∕Al∕Mo∕Au ohmic contacts to AlGaN∕GaN heterostructures
Comparative study of Ti∕Al∕Mo∕Au, Mo∕Al∕Mo∕Au, and V∕Al∕Mo∕Au ohmic contacts to AlGaN∕GaN heterostructures
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DOI：
10.1116/1.1798811
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发表时间：
2004-10
影响因子：
1.4
通讯作者：
D. Selvanathan;F. Mohammed;Asrat Tesfayesus;I. Adesida
中科院分区：
文献类型：
--
作者：
D. Selvanathan;F. Mohammed;Asrat Tesfayesus;I. Adesida
研究和比较了在AlGaN scinGaN异质结场效应晶体管层上Ti scinAl scinMo scinAu、Mo scinAl scinMo scinAu和V scinAl scinMo Au形成欧姆接触。在650 ~ 800 °C的退火温度范围内，Mo scinAl scinMo Au欧姆接触的接触电阻最低，为0.22±0.02Ωmm。Ti scinAl scinMo Au和V scinAl scinMo Au欧姆接触的最小接触电阻在800° C的退火温度下测量为0.38±0.04Ωmm，在700°C的退火温度下测量为0.35±0.07Ωmm。在500、600和700°C下进行长期热稳定性测量。在三种金属化方案中，Ti scinAl scinMo Au表现出最好的热稳定性（在700°C下长达8.5小时）。利用俄歇电子能谱和X射线衍射测量研究了金属间反应。
Ohmic contact formation by Ti∕Al∕Mo∕Au, Mo∕Al∕Mo∕Au, and V∕Al∕Mo∕Au on AlGaN∕GaN heterostructure field effect transistor layers have been studied and compared. Mo∕Al∕Mo∕Au ohmic contacts exhibited the lowest contact resistance of 0.22±0.02Ωmm over a range of anneal temperatures from 650to800°C. The minimum contact resistances of Ti∕Al∕Mo∕Au and V∕Al∕Mo∕Au ohmic contacts were measured to be 0.38±0.04Ωmm at an anneal temperature of 800°C and 0.35±0.07Ωmm at an anneal temperature of 700°C, respectively. Long-term thermal stability measurements were performed at 500, 600, and 700°C. Of the three metallization schemes, Ti∕Al∕Mo∕Au exhibited the best thermal stability (up to 8.5h at 700°C). Intermetallic reactions were investigated using Auger electron spectroscopy and x-ray diffraction measurements.