Chemical etching of {1 1 1} and {1 0 0} surfaces of InP
Chemical etching of {1 1 1} and {1 0 0} surfaces of InP
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InP的{1 1 1}和{1 0 0}表面的化学蚀刻
DOI：
10.1007/bf00754890
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发表时间：
1973
影响因子：
4.5
通讯作者：
A. Baker
中科院分区：
文献类型：
--
作者：
B. Tuck;A. Baker
采用{1 0 0}和{1 1 1}两种晶面，研究了几种化学腐蚀对III-V半导体InP的影响。发现(1 1 1)和(1‘1’1)晶面的行为不同，这归因于闪锌矿晶格的极性。绘制了刻蚀速率随渗透率变化的曲线，并注意到它们显示出接近表面的刻蚀速率提高。这归因于与切割水晶片相关的表面层受损。使用光学显微镜和扫描电子显微镜在蚀刻的不同阶段拍摄照片。观察到了腐蚀坑和腐蚀丘。将凹坑的形状与以前发表的工作中描述的形状进行了比较，并讨论了产生这些形状的可能原因。描述了产生蚀刻丘所需的条件，结果表明，在1HCl：1HNO_3蚀刻的情况下，所测得的蚀刻速率与丘的形成是一致的。对溶解机理进行了探讨，认为溶解过程既有活化控制，又有扩散控制。
The effects of a number of chemical etches on the III–V semiconductor InP were studied, using {1 0 0} and {1 1 1}-type faces. The (1 1 1) and (¯1¯1¯1) faces were found to behave differently, and this was attributed to the polarity of the zinc-blende lattice. Curves showing etching rate as a function of penetration were plotted, and it is noted that they demonstrate an enhanced etching rate close to the surface. This is attributed to the damaged surface layer associated with the cutting of a crystal slice. Photographs were taken at various stages of the etching using both the optical and scanning electron microscopes. Both etch pits and etch hillocks were observed. The shapes of the pits are compared to those described in previously published work, and possible reasons for these shapes are discussed. The conditions necessary for the production of an etch hillock are described and it is shown that the measured etching rates are consistent with hillock formation in the case of the 1 HCl∶1HNO3 etch. The mechanisms of dissolution are discussed and it is suggested that both activation control of the dissolution process and diffusion control were observed in the work.