Electron transport in granular amorphous silicon dioxide films with ferromagnetic nanoparticles placed in a magnetic field
Electron transport in granular amorphous silicon dioxide films with ferromagnetic nanoparticles placed in a magnetic field
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磁场中铁磁纳米粒子在颗粒状非晶二氧化硅薄膜中的电子传输
DOI：
10.1134/1.1514778
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发表时间：
2002
影响因子：
0.6
通讯作者：
O. Stogneĭ
中科院分区：
文献类型：
--
作者：
L. Lutsev;Y. Kalinin;A. Sitnikov;O. Stogneĭ
研究了Co、Nb、Ta纳米粒子嵌入非晶二氧化硅薄膜中的电子输运特性。粒子间隧道通道中的局域态的平均数来自电导率的温度依赖性为各种晶粒浓度的假设下，由共振隧穿晶粒之间的局域态链中的电子传输。为了证实隧穿的非弹性特性的假设，磁电阻的晶粒浓度，温度和磁场的依赖关系进行了研究。接受单轨道模型，其中的晶粒间的隧道磁电阻是确定的bys-stunneles，它被发现，存在于隧道沟道中的弱分裂局域态的结果在强磁场中的磁阻饱和不足。的组合效应的减少，在这些-stunneling系数和增长的非弹性电子自旋散射的概率与增加的长度的链之间的局部状态的粒子，其中电子是隧道占的特性的温度-浓度依赖性的磁阻。这些功能的实验观察提供了一个参数的电子输运ina-SiO2（钴，铌，钽）结构的非弹性共振隧穿通过晶粒间局域态。
Electron transport in amorphous silicon dioxide films with embedded nanoparticles (Co, Nb, Ta) was studied. The mean number of localized states in the interparticle tunneling channel was derived from the temperature dependence of conductivity for various grain concentrations under the assumption of the electron transport being governed by resonance tunneling in a chain of localized states between grains. To confirm the assumption of the inelastic character of tunneling, the dependences of the magnetoresistance on grain concentration, temperature, and magnetic field were studied. Accepting the single-orbital model, where the intergrain tunneling magnetoresistance is determined bys-stunneling, it was found that the existence of weakly split localized states in the tunneling channel results in a lack of magnetoresistance saturation in strong magnetic fields. The combined effect of a decrease in thes-stunneling coefficient and of growth in the probability of inelastic electron spin scattering with increasing length of the chain of localized states between particles in which the electron is tunneling accounts for the characteristic temperature-concentration dependences of the magnetoresistance. The experimental observation of these features provides an argument for the electron transport ina-SiO2(Co,Nb,Ta) structures being governed by inelastic resonance tunneling through intergrain localized states.