Effects of macroscopic polarization in III-V nitride multiple quantum wells
Effects of macroscopic polarization in III-V nitride multiple quantum wells
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DOI：
10.1103/physrevb.60.8849
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发表时间：
1999-09-15
影响因子：
3.7
通讯作者：
Lugli, P
中科院分区：
文献类型：
--
作者：
Fiorentini, V;Bernardini, F;Lugli, P
据预测，纤锌矿III-V氮化物、薄膜和多层膜中将存在巨大的内置电场。这种场来源于氮化物宏观体极化的异质界面不连续性。在这里，我们讨论了背景理论，自发极化在这一背景下的作用，以及内置极化场在氮化物纳米结构中的实际意义。为了支持我们的论点，我们给出了典型的氮化物量子阱结构的详细的自洽紧束缚模拟，其中极化效应占主导地位。[S0163-1829(99)02235-3]。
Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride quantum well structures in which polarization effects are dominant. [S0163-1829(99)02235-3].