Triplet-singlet relaxation in semiconductor single and double quantum dots
Triplet-singlet relaxation in semiconductor single and double quantum dots
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DOI：
10.1103/physrevb.76.235313
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发表时间：
2007-08
影响因子：
3.7
通讯作者：
K. Shen;M. W. Wu
中科院分区：
文献类型：
--
作者：
K. Shen;M. W. Wu
研究了双电子半导体量子点中的三重态-单重态弛豫。讨论了单点和垂直耦合双点。在我们的工作中，电子-电子库仑相互作用，这在电子结构中起着重要的作用，包括在内。自旋-轨道耦合是导致三重态-单重态弛豫的关键。我们发现，文献中广泛使用的选择规则是不正确的，除非在单量子点的交叉点和/或反交叉点附近。双量子点中的三重态-单重态弛豫可以通过改变势垒高度、量子点间距、外加磁场和量子点尺寸而显著改变。
We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in the electronic structure, is included. The spin mixing is caused by spin-orbit coupling which is the key to the triplet-singlet relaxation. We show that the selection rule widely used in the literature is incorrect unless near the crossing and/or anticrossing point in single quantum dots. The triplet-singlet relaxation in double quantum dots can be markedly changed by varying barrier height, interdot distance, external magnetic field, and dot size.