Floating-gate nanofibrous electret arrays for high performance nonvolatile organic transistor memory devices
Floating-gate nanofibrous electret arrays for high performance nonvolatile organic transistor memory devices
复制标题
用于高性能非易失性有机晶体管存储器件的浮栅纳米纤维驻极体阵列
DOI：
10.1016/j.orgel.2017.05.022
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发表时间：
2017
影响因子：
3.2
通讯作者：
Huang Wei
中科院分区：
文献类型：
--
作者：
Shi Naien;Liu Dong;Jin Xiaolei;Wu W;an;Zhang Jun;Yi Mingdong;Xie Linghai;Guo Fengning;Yang Lei;Ou Changjin;Xue Wei;Huang Wei
首次采用静电纺丝技术制备了基于纳米纤维驻极体阵列的有机场效应浮栅晶体管存储器。该阵列由一种新型卟啉分子[5，15-双[4-（吡啶基）乙炔基]-10，20-二苯基]-21H，23-卟啉（DPP）作为电荷捕获单元，聚苯乙烯（PS）作为隧穿层构成。基于静电纺丝纳米纤维驻极体阵列的浮栅晶体管存储器具有可靠的可控阈值电压漂移和有效的电荷捕获能力，明显上级目前广泛应用的旋涂技术。结果表明，静电纺丝技术可以作为一种有效的人工策略，制备出具有预定微结构的驻极体，优化其电存储特性，并有望应用于未来的非织造电子存储器件。
Nanofibrous electret arrays based organic field-effect floating-gate transistor memory was firstly developed by electrospinning. The nanofiber arrays are composed of a novel porphyrin molecule of [5,15-bis[4-(pyridyl)ethynyl]-10,20-diphenyl]-21H,23H-porphyrin (DPP) as charge-trapping elements and polystyrene (PS) as the tunneling layer. The floating-gate transistor memory based on electrospinning nanofibrous electret arrays exhibited a reliable controllable threshold voltage shift and effective charge-trapping ability which was obviously superior to the counterparts fabricated with widely employed spin-coating technique. The result shows that electrospinning can be used as an effective artificial strategy to produce predesigned microstructure for the electrets, optimize the electrical memory characteristics, and may be applied in future nonwoven electronic memory devices.