Diamond nucleation in carbon films on Si wafer during microwave plasma enhanced chemical vapor deposition for quantum applications
Diamond nucleation in carbon films on Si wafer during microwave plasma enhanced chemical vapor deposition for quantum applications
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DOI：
10.1063/5.0143800
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发表时间：
2023-04
影响因子：
3.2
通讯作者：
Vidhya Sagar Jayaseelan;Raj N. Singh
中科院分区：
文献类型：
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作者：
Vidhya Sagar Jayaseelan;Raj N. Singh
成核对于通过微波等离子体增强化学气相沉积 (MPECVD) 加工高质量金刚石晶体和纹理薄膜非常重要，以应用于量子器件和系统。偏置增强成核 (BEN) 是 MPECVD 过程中金刚石原位成核的一种方法。然而，BEN 使金刚石成核的机制尚不清楚。本文描述了在 BEN 促进的 MPECVD 过程中施加电场后碳膜内金刚石成核的结果。金刚石膜和形成的核的性质通过 SEM（扫描电子显微镜）、拉曼光谱和高分辨率透射电子显微镜 (HRTEM) 进行表征。成核层的 HRTEM 图像和相关衍射图显示，在微波和电场的影响下，金刚石核在靠近 Si (100) 基底表面的碳膜内形成，从而导致在进一步生长时形成织构化金刚石膜和晶体。这些结果有望开发出包含氮空位中心的最佳质量的金刚石薄膜，用于量子系统中的应用。
Nucleation is important in processing of good quality diamond crystals and textured thin films by microwave plasma enhanced chemical vapor deposition (MPECVD) for applications in quantum devices and systems. Bias-enhanced nucleation (BEN) is one approach for diamond nucleation in situ during MPECVD. However, the mechanism of diamond nucleation by BEN is not well understood. This paper describes results on the nucleation of diamond within a carbon film upon application of electric field during the BEN-facilitated MPECVD process. The nature of the diamond film and nuclei formed is characterized by SEM (scanning electron microscopy), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The HRTEM images and associated diffraction patterns of the nucleation layer show that the diamond nuclei are formed within the carbon film close to the Si (100) substrate surface under the influence of microwaves and electric fields that lead to formation of the textured diamond film and crystal upon further growth. These results are expected to develop diamond films of optimum quality containing a nitrogen-vacancy center for application in quantum systems.